Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface
نویسندگان
چکیده
References 1. Prakash A, Maikap S, Chiu HC, Tien TC, Lai CS: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/ TaOx interface. Nanoscale Research Letters 2013, 9:152. 2. Prakash A, Maikap S, Chiu HC, Tien TC, Lai CS: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/ TaOx interface. Nanoscale Research Letters 2014, 9:125.
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